RN2112MFV,RN2113MFV

2010-05-21

1

1. BASE

2. EMITTER

3. COLLECTOR

VESM

1

2

3

0.8±0.05

1.2±0.05

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2112MFV,RN2113MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1112MFV and RN1113MFV

Equivalent Circuit

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−100

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may

cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

× 25.4 mm × 1.6 mmt)

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit: mm

0.5

0.45

0.4

0.4

1.15

0.45

0.4

Land Pattern Example

Unit:mm