RN2101MFV

∼RN2106MFV

2010-04-06

1

Type No.

R1 (kΩ)R2 (kΩ)

RN2101MFV

4.7

4.7

RN2102MFV

10

10

RN2103MFV

22

22

RN2104MFV

47

47

RN2105MFV

2.2

47

RN2106MFV

4.7

47

1

2

3

0.80 ± 0.05

1.2 ± 0.05

1

VESM

1. BASE

2. EMITTER

3. COLLECTOR

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101MFV,RN2102MFV,RN2103MFV

RN2104MFV,RN2105MFV,RN2106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1101MFV to RN1106MFV

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2101MFV to 2106MFV

−50

V

RN2101MFV to 2104MFV

−10

Emitter-base voltage

RN2105MFV, 2106MFV

−5

V

Collector current

−100

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature range

RN2101MFV to 2106MFV

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

× 25.4 mm × 1.6 mm)

Land Pattern Example

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit: mm

0.5

0.45

0.4

0.4

1.15

0.45

0.4

Unit:mm