RN1910FS,RN1911FS

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1910FS,RN1911FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into a fine pitch small mold (6-pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

• Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

• Complementary to RN2910FS, RN2911FS

Equivalent Circuit and Bias Resistor Values

(Q1, Q2 common)

Unit: mm

fS6

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

6.COLLECTOR1

0.1±0.05

6

0.8±0.05

1.0±0.05

1

2

0.1±0.05

3

5

4

(E1)

(E2)

(B2)

(C2)

(B2)

(C1)

fS6

1. EMITTER1

2. BASE1

3. COLLECTOR2

4. EMITTER2

5. BASE2

6. COLEECTOR1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

JEDEC

―

JEITA

―

TOSHIBA

2-1F1D

Weight: 0.001g (typ.)

6

5

4

1

2

3

Q1

Q2

Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

20

V

Emitter-base voltage

5

V

Collector current

50

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Equivalent Circuit

(top view)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

100

nA

Emitter cut-off current

⎯

⎯

100

nA

DC current gain

300

⎯

⎯

Collector-emitter saturation voltage

⎯

⎯

0.15

V

Collector output capacitance

⎯

1.2

⎯

pF

RN1910FS

3.76

4.7

5.64

Input resistor

RN1911FS

R1

⎯

8

10

12

k

Ω