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RN1910FS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1910FS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page RN1910FS,RN1911FS 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2910FS, RN2911FS Equivalent Circuit and Bias Resistor Values Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Unit: mm fS6 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1 0.1±0.05 6 0.8±0.05 1.0±0.05 1 2 0.1±0.05 3 5 4 (E1) (E2) (B2) (C2) (B2) (C1) fS6 1. EMITTER1 2. BASE1 3. COLLECTOR2 4. EMITTER2 5. BASE2 6. COLEECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― JEITA ― TOSHIBA 2-1F1D Weight: 0.001g (typ.) 6 5 4 1 2 3 Q1 Q2 Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC(Note 1) 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Equivalent Circuit (top view) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 300 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ ⎯ 0.15 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF RN1910FS 3.76 4.7 5.64 Input resistor RN1911FS R1 ⎯ 8 10 12 k Ω |
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