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IMX51AEC Datasheet(PDF) 23 Page - Freescale Semiconductor, Inc |
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IMX51AEC Datasheet(HTML) 23 Page - Freescale Semiconductor, Inc |
23 / 175 page Electrical Characteristics i.MX51A Automotive and Infotainment Applications Processors, Rev. 6 Freescale Semiconductor 23 NOTE The term OVDD in this section refers to the associated supply rail of an input or output. The association is shown in Table 128. 4.3.1 GPIO/HSGPIO DC Parameters The parameters in Table 18 are guaranteed per the operating ranges in Table 13, unless otherwise noted. Table 18. GPIO/HSGPIO DC Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit High-level output voltage Voh Iout = -1 mA OVDD –0.15 — OVDD + 0.3 V Low-level output voltage Vol Iout = 1mA — — 0.15 V High-level output current Ioh Vout = 0.8 ×OVDD Low drive Medium drive High drive Max drive –1.9 –3.7 –5.2 –6.6 —— mA Low-level output current Iol Vout = 0.2 ×OVDD Low drive Medium drive High drive Max drive 1.9 3.7 5.2 6.6 —— mA High-Level DC input voltage1 1 To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s. VIH — 0.7 × OVDD — OVDD V Low-Level DC input voltage1 VIL — 0 — 0.3 ×OVDD V Input Hysteresis VHYS OVDD = 1.875 OVDD = 2.775 0.25 0.34 0.45 —V Schmitt trigger VT+1, 2 2 Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled. VT+ — 0.5OVDD — — V Schmitt trigger VT-1, 2 VT- — — — 0.5 × OVDD V Input current (no pull-up/down) Iin Vin = OVDD or 0 — — See Note 3 3 I/O leakage currents are listed in Table 25. — Input current (22 k Ω Pull-up) Iin Vin = 0 — — 161 μA Input current (47 k Ω Pull-up) Iin Vin = 0 — — 76 μA Input current (100 k Ω Pull-up) Iin Vin = 0 — — 36 μA Input current (100 k Ω Pull-down) Iin Vin = OVDD — — 36 μA Keeper Circuit Resistance — OVDD = 1.875V OVDD = 2.775V — — 22 17 — — k Ω |
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