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CXD1172AM Datasheet(PDF) 4 Page - Sony Corporation |
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CXD1172AM Datasheet(HTML) 4 Page - Sony Corporation |
4 / 11 page – 4 – CXD1172AM/AP Electrical Characteristics (VDD = 5V, VRB = 1.0V, VRT = 2.0V, Ta = 25°C) Conversion speed Supply current Reference pin current Analog input band width (–1dB) Analog input capacitance Reference resistance (VRT to VRB) Offset voltage∗1 Digital input voltage Digital input current Digital output current Output data delay Integral non-linearity error Differential non-linearity error Differential gain error Differential phase error Aperture jitter Sampling delay 0.5 3 175 0 15 4.0 –1.1 3.7 VDD = 4.75 to 5.25V Ta = –20 to +75°C VIN = 1.0 to 2.0V fIN = 1kHz ramp Fc = 20MSPS NTSC ramp wave input Envelope VIN = 1.5V + 0.07Vrms Potential difference to VRT Potential difference to VRB VDD = 4.75 to 5.25V Ta = –20 to +75°C VDD = max. VDD = min. With TTL 1 gate and 10pF load Ta = –20 to +75°C VDD = 4.75 to 5.25V End point NTSC 40 IRE mod ramp Fc = 14.3MSPS 7 4 18 4 250 –20 35 18 ±0.3 ±0.3 1.0 1.0 40 4 20 12 5.7 325 –40 55 1.0 5 5 30 ±0.5 ±0.5 MSPS mA MHz pF Ω mV V µA mA ns LSB % deg ps ns Item Symbol Conditions Min. Typ. Max. Unit ∗1 The offset voltage EOB is a potential difference between VRB and a point of position where the voltage drops equivalent to 1/2 LSB of the voltage when the output data changes from "00000000" to "00000001". EOT is a potential difference between VRT and a potential of point where the voltage rises equivalent to 1/2 LSB of the voltage when the output data changes from "11111111" to "11111110". VIH = VDD VIL = 0V VOH = VDD + 0.5V VOL = 0.4V Fc IDD IREF BW CIN RREF EOT EOB VIH VIL IIH IIL IOH IOL TDL EL ED DG DP Taj Tsd |
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