SSM6P47NU datasheet(2/6 Pages) TOSHIBA

Part #	SSM6P47NU

Description	Power Management Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM6P47NU

2011-03-10

2

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

V (BR) DSS ID = -1 mA, VGS = 0 V

-20

⎯

Drain-Source breakdown voltage

V (BR) DSX ID = -1 mA, VGS = 5 V

(Note 4)

-15

⎯

V

Drain cut-off current

IDSS

VDS = -20 V, VGS = 0 V

⎯

-1

μA

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = -3 V, ID = -1 mA

-0.3

⎯

-1.0

V

Forward transfer admittance

⏐Yfs⏐

VDS = -3 V, ID = -1.0 A

(Note 3)

2.8

5.6

⎯

S

ID = -1.5 A, VGS = -4.5 V

(Note 3)

⎯

80.5

95

ID = -1.0 A, VGS = -2.5 V

(Note 3)

⎯

99.5

125

ID = -0.5 A, VGS = -1.8 V

(Note 3)

⎯

122

170

Drain–source ON-resistance

RDS (ON)

ID = -0.25 A, VGS = -1.5 V

(Note 3)

⎯

143

242

m

Ω

Input capacitance

Ciss

⎯

290

⎯

Output capacitance

Coss

⎯

44

⎯

Reverse transfer capacitance

Crss

VDS = -10 V, VGS = 0 V, f = 1 MHz

⎯

32

⎯

pF

Total Gate Charge

Qg

⎯

4.6

⎯

Gate-Source Charge

Qgs1

⎯

0.5

⎯

Gate-Drain Charge

Qgd

VDD = −10 V, ID = −3.5 A

VGS = −4.5 V

⎯

1.2

⎯

nC

Turn-on time

ton

⎯

12.0

⎯

Switching time

Turn-off time

toff

VDD = -10 V, ID = -0.5 A,

VGS = 0 to -2.5 V, RG = 4.7 Ω

⎯

46.2

⎯

ns

Drain-Source forward voltage

VDSF

ID = 4.0 A, VGS = 0 V

(Note 3)

⎯

0.9

1.2

V

Note 3: Pulse test

Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the

drain-source breakdown voltage is lowered in this mode.

Switching Time Test Circuit

Notice on Usage

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the

SSM6P47NU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness

and pad area. When using this device, please take heat dissipation into consideration

ton

toff

(b) VIN

(c) VOUT

0 V

−2.5 V

VDD

VDS (ON)

tr

tf

90%

10%

(a) Test circuit

VDD = −10 V

RG = 4.7 Ω

Duty

≤ 1%

VIN: tr, tf < 5 ns

Common source

Ta

= 25°C

0

−2.5 V

IN

OUT

VDD

10

μs

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