SSM3K15ACT

2010-11-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

SSM3K15ACT

Load Switching Applications

• 2.5 V drive

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

30

V

Gate-Source voltage

± 20

V

DC

100

Drain current

Pulse

400

mA

Power dissipation

100

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(10 mm

× 10 mm × 1.0 mm, Cu Pad: 100 mm

2

)

Marking (Top View)

Pin Condition (Top View)

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1B

Weight: 0.75 mg (typ.)

CST3

1. Gate

2. Source

3. Drain

Polarity mark

Polarity mark (on the top)

1

2

3

DI

12

3