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TC74HC03AP Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TC74HC03AP
Description  Quad 2-Input NAND Gate (open drain)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC03AP Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TC74HC03AP/AF
2012-02-29
4
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Test Condition
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
Output transition time
tTHL
⎯
2.0
4.5
6.0
⎯
⎯
⎯
30
8
7
75
15
13
⎯
⎯
⎯
95
19
16
ns
Propagation delay
time
tpLZ
RL = 1 kΩ
2.0
4.5
6.0
⎯
⎯
⎯
20
10
9
75
15
13
⎯
⎯
⎯
95
19
16
ns
Propagation delay
time
tpZL
RL = 1 kΩ
2.0
4.5
6.0
⎯
⎯
⎯
24
8
7
75
15
13
⎯
⎯
⎯
95
19
16
ns
Input capacitance
CIN
⎯
⎯
5
10
⎯
10
pF
Output capacitance
COUT
⎯
⎯
3
⎯
⎯
⎯
pF
Power dissipation
capacitance
CPD
(Note)
⎯
⎯
5
⎯
⎯
⎯
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC/4 (per gate)


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