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TC7SG17FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7SG17FE
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SG17FE Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TC7SG17FE
2009-09-18
3
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= −40 to 85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
0.73
0.80
1.1
0.86
0.93
1.4
1.07
1.12
1.65
1.23
1.25
2.3
1.66
1.68
Positive
threshold
voltage
VP
3.0
2.14
2.15
0.9
0.18
0.07
1.1
0.26
0.18
1.4
0.36
0.31
1.65
0.45
0.41
2.3
0.69
0.64
Threshold
voltage
Negative
threshold
voltage
VN
3.0
0.96
0.91
V
0.9
0.20
0.38
0.15
0.53
1.1
0.25
0.41
0.21
0.53
1.4
0.35
0.48
0.34
0.57
1.65
0.42
0.56
0.40
0.60
2.3
0.60
0.74
0.60
0.76
Hysteresis voltage
VH
3.0
0.79
0.93
0.79
0.94
V
IOH =−0.02 mA
0.9
0.75
0.75
IOH = −0.3 mA
1.1 to 1.3
VCC
× 0.75
VCC
× 0.75
IOH = −1.7 mA
1.4 to 1.6
VCC
× 0.75
VCC
× 0.75
IOH = −3.0 mA
1.65 to
1.95
VCC
-0.45
VCC
-0.45
IOH = −4.0 mA
2.3 to 2.7
2.0
2.0
High level
VOH
VIN = VIH
IOH = −8.0 mA
3.0 to 3.6
2.48
2.48
IOL = 0.02 mA
0.9
0.1
0.1
IOL = 0.3 mA
1.1 to 1.3
VCC
× 0.25
VCC
× 0.25
IOL = 1.7 mA
1.4 to 1.6
VCC
× 0.25
VCC
× 0.25
IOL = 3.0 mA
1.65 to
1.95
0.45
0.45
IOL = 4.0 mA
2.3 to 2.7
0.4
0.4
Output voltage
Low level
VOL
VIN = VIL
IOL = 8.0 mA
3.0 to 3.6
0.4
0.4
V
Input leakage current
IIN
VIN = 0 to 5.5V
0 to 3.6
±0.1
±1.0
μA
Power off leakage current
IOFF
VIN = 0 to 5.5V
VOUT = 0 to 3.6V
0
1.0
10.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
3.6
1.0
10.0
μΑ


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