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TC7SG17FE Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TC7SG17FE
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Download  6 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SG17FE Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TC7SG17FE
2009-09-18
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG17FE
Schmitt Buffer
Features
• High output current
: ±8 mA (min) at VCC = 3.0 V
• Super high speed operation : tpd = 3.7 ns (typ.)
at VCC = 3.3 V,15pF
• Operating voltage range
: VCC = 0.9 to 3.6 V
• 5.5-V tolerant input.
• 3.6-V power down protection output.
Marking
Pin Assignment (top view)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 4.6
V
DC input voltage
VIN
−0.5 to 7.0
V
−0.5 to 4.6 (Note 1)
DC output voltage
VOUT
−0.5 to VCC + 0.5 (Note 2)
V
Input diode current
IIK
−20
mA
Output diode current
IOK
−20
(Note 3)
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
150
mW
Storage temperature
Tstg
−65 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
(ESV)
Weight: 0.003 g (typ.)
Product name
W L
5 VCC
4 OUT Y
IN A
2
GND
3
NC
1


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