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TC7SG17FE Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TC7SG17FE Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page ![]() TC7SG17FE 2009-09-18 4 AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns) Ta = 25°C Ta = −40 to 85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 0.9 ⎯ 27.3 ⎯ ⎯ ⎯ 1.1 to 1.3 ⎯ 13.0 22.6 1.0 35.9 1.4 to 1.6 ⎯ 7.5 10.5 1.0 11.3 1.65 to 1.95 ⎯ 6.0 7.8 1.0 8.2 2.3 to 2.7 ⎯ 4.3 5.4 1.0 5.8 CL = 10 pF, RL = 1 MΩ 3.0 to 3.6 ⎯ 3.5 4.4 1.0 4.6 0.9 ⎯ 29.5 ⎯ ⎯ ⎯ 1.1 to 1.3 ⎯ 14.3 25.1 1.0 41.8 1.4 to 1.6 ⎯ 8.0 11.5 1.0 12.6 1.65 to 1.95 ⎯ 6.3 8.4 1.0 8.7 2.3 to 2.7 ⎯ 4.6 5.7 1.0 6.1 CL = 15 pF, RL = 1 MΩ 3.0 to 3.6 ⎯ 3.7 4.6 1.0 5.0 0.9 ⎯ 40.5 ⎯ ⎯ ⎯ 1.1 to 1.3 ⎯ 19.6 35.7 1.0 58.1 1.4 to 1.6 ⎯ 10.7 15.8 1.0 17.6 1.65 to 1.95 ⎯ 7.8 10.7 1.0 11.7 2.3 to 2.7 ⎯ 5.4 6.9 1.0 8.1 Propagation delay time tpLH tpHL CL = 30 pF, RL = 1 MΩ 3.0 to 3.6 ⎯ 4.3 5.2 1.0 6.1 ns Input capacitance CIN ⎯ 3.6 ⎯ 3 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note 12) 0.9 to 3.6 ⎯ 7 ⎯ ⎯ ⎯ pF Note 12: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr.) = CPD・VCC・fIN + ICC |
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