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BFQ19 Datasheet(PDF) 71 Page - NXP Semiconductors |
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BFQ19 Datasheet(HTML) 71 Page - NXP Semiconductors |
71 / 130 page 72 NXP Semiconductors RF Manual 16th edition 2.6.3 LookingforaleaderinSiGe:C?Youjustfoundus! NXP QUBiC4 process technology NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power. QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high- volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field. There are three QUBiC4 variants, each with its own benefits for specific application areas QUBiC4+ The QUBiC4+ BiCMOS process features 0.25 μm CMOS with 5 metal layers for integration of dense digital logic-based smart functionality, a rich set of active and passive devices for high-frequency mixed-signal designs, including thick top metal layers for high-quality inductors. The device set includes 35 GHz f T NPNs with 3.8 V breakdown voltage (BVce0) and low noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz f T VPNPs, a 28 GHz high-voltage NPN with 5.9 V breakdown voltage, differential and single-ended varicaps with Q-factor > 30, scalable inductors with Q-factor > 20, 800 MHz FT lateral PNPs, 0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor, 1 to 6 fF/μm2 oxide capacitors and various other devices including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS transistors capacitor. The QUBiC4+ process is silicon-based and ideal for applications up to 5 GHz (f T = 35 GHz, NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers up to 33 dBm. QUBiC4X The QUBiC4X BiCMOS process is a SiGe:C-based extension of the QUBiC process for high-frequency mixed-signal designs and offers a rich set of devices, including a 110 GHz f T NPN with 2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @ 10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide capacitor, and a 5 fF/μm2 MIM capacitor. The QUBiC4X is ideal for applications that typically operate at up to 30 GHz (f T = 110 GHz , NF < 1.0 dB @ 10 GHz) and ultra- low noise applications such as LNAs and mixers. QUBiC4Xi The QUBiC4Xi BiCMOS process further enhances the QUBiC4X process and offers an additional feature set of devices for high- frequency mixed-signal designs. These include 180 GHz f T NPNs with 1.4 V breakdown voltage and ultra-low noise figure (NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor. QUBiC4Xi represents the newest SiGe:C process, with improved f T (> 200 GHz) and even lower noise figure (NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond 30 GHz, such as LO generators. |
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