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SQS466EEN Datasheet(PDF) 4 Page - Vishay Siliconix |
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SQS466EEN Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page SQS466EEN www.vishay.com Vishay Siliconix S11-2129 Rev. B, 31-Oct-11 4 Document Number: 71481 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 0 102030405060 200 400 600 800 1000 V DS - Drain-to-Source Voltage (V) C oss C rss C iss 0.5 - 50 - 25 25 75 125 0 50 100 150 175 0.9 1.7 1.3 2.1 2.5 T J - Junction Temperature (°C) I D = 3.2 A V GS = 10 V 0.00 02 6 48 10 0.20 0.15 0.10 0.05 0.25 VGS - Gate-to-Source Voltage (V) T J = 150 °C T J = 25 °C 0369 12 15 Q g - Total Gate Charge (nC) 0 2 4 6 8 10 V DS = 30 V I D = 5.4 A 0.001 0.0 0.2 0.6 1.0 0.4 0.8 1.2 0.01 1 0.1 10 100 T J = 150 °C T J = 25 °C V SD - Source-to-Drain Voltage (V) - 1.2 - 50 - 25 25 75 125 0 50 100 150 175 - 0.9 - 0.3 - 0.6 0.0 0.3 0.6 T J - Junction Temperature (°C) I D = 5 mA I D = 250 μA |
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