SQS466EEN datasheet(4/13 Pages) VISHAY

Part #	SQS466EEN

Description	Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQS466EEN

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Vishay Siliconix

S11-2129 Rev. B, 31-Oct-11

4

Document Number: 71481

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

0

102030405060

200

400

600

800

1000

V

DS - Drain-to-Source Voltage (V)

C

oss

C

rss

C

iss

0.5

- 50

- 25

25

75

125

0

50

100

150

175

0.9

1.7

1.3

2.1

2.5

T

J - Junction Temperature (°C)

I

D = 3.2 A

V

GS = 10 V

0.00

02

6

48

10

0.20

0.15

0.10

0.05

0.25

VGS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0369

12

15

Q

g - Total Gate Charge (nC)

0

2

4

6

8

10

V

DS = 30 V

I

D = 5.4 A

0.001

0.0

0.2

0.6

1.0

0.4

0.8

1.2

0.01

1

0.1

10

100

T

J = 150 °C

T

J = 25 °C

V

SD - Source-to-Drain Voltage (V)

- 1.2

- 50

- 25

25

75

125

0

50

100

150

175

- 0.9

- 0.3

- 0.6

0.0

0.3

0.6

T

J - Junction Temperature (°C)

I

D = 5 mA

I

D = 250 μA

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