SQS466EEN datasheet(3/13 Pages) VISHAY

Part #	SQS466EEN

Description	Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQS466EEN

www.vishay.com

Vishay Siliconix

S11-2129 Rev. B, 31-Oct-11

3

Document Number: 71481

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

Transconductance

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

On-Resistance vs. Drain Current

0

6

12

24

30

18

0.003

0.001

0.005

0.002

0.004

VGS - Gate-to-Source Voltage (V)

T

J = 25 °C

0

012345

3

6

9

12

15

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 3 V

0

02468

10

5

10

15

20

25

I

D - Drain Current (A)

T

C = 125 °C

T

C = 25 °C

T

C = - 55 °C

10

-10

0

6

12

24

30

18

10

-2

10

-8

10

-6

10

-4

VGS - Gate-to-Source Voltage (V)

T

J = 25 °C

T

J = 150 °C

0

012345

3

6

9

12

15

V

GS - Gate-to-Source Voltage (V)

T

C = 125 °C

T

C = 25 °C

T

C = - 55 °C

0.00

0369

12

15

0.03

0.06

0.09

0.15

0.12

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

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