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SQD30N05-20L Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SQD30N05-20L
Description  Automotive N-Channel 55 V (D-S) 175 °C MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SQD30N05-20L Datasheet(HTML) 2 Page - Vishay Siliconix

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SQD30N05-20L
www.vishay.com
Vishay Siliconix
S12-1846-Rev. C, 30-Jul-12
2
Document Number: 67054
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
55
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 55 V
--
1
μA
VGS = 0 V
VDS = 55 V, TJ = 125 °C
--
50
VGS = 0 V
VDS = 55 V, TJ = 175 °C
-
-
250
On-State Drain Currenta
ID(on)
VGS = 5 V
VDS5 V
30
-
-
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
ID = 20 A
-
0.016
0.020
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.035
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.043
VGS = 4.5 V
ID = 15 A
-
0.021
0.026
Forward Transconductanceb
gfs
VDS = 15 V, ID = 20 A
-34
-
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
938
1175
pF
Output Capacitance
Coss
-
203
255
Reverse Transfer Capacitance
Crss
-
86
110
Total Gate Chargec
Qg
VGS = 5 V
VDS = 25 V, ID = 35 A
-12
18
nC
Gate-Source Chargec
Qgs
-4.1
-
Gate-Drain Chargec
Qgd
-4.8
-
Gate Resistance
Rg
f = 1 MHz
1.40
2.89
4.50
Turn-On Delay Timec
td(on)
VDD = 25 V, RL = 0.71 
ID  35 A, VGEN = 10 V, Rg = 1 
-7
11
ns
Rise Timec
tr
-10
15
Turn-Off Delay Timec
td(off)
-18
27
Fall Timec
tf
-5
8
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
120
A
Forward Voltage
VSD
IF = 80 A, VGS = 0 V
-1.2
1.5
V


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