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STN6303 Datasheet(PDF) 3 Page - Stanson Technology

Part No. STN6303
Description  STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STN6303 Datasheet(HTML) 3 Page - Stanson Technology

   
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STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6303 2008. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
23
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
0.35
1.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=+/-12V
±100
nA
VDS=20V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
VDS=20V,VGS=0V
TJ=85℃
5
uA
On-State Drain Current
ID(on)
VDS
≦5V,VGS=4.5V
2.5
A
VGS=4.5V,ID=0.5A
385
400
Drain-source On-Resistance
RDS(on)
VGS=2.7V,ID=0.2A
530
550
m
Forward Transconductance
gfs
VDS=10V,ID=1.2A
2.6
S
Diode Forward Voltage
VSD
IS=0.5A,VGS=0V
0.8
1.2
V
DYNAMIC
Total Gate Charge
Qg
1.2
1.5
Gate-Source Charge
Qgs
0.2
Gate-Drain Charge
Qgd
VDS=10V,VGS=4.5V,VDS=0.7A
0.3
nC
Input Capacitance
Ciss
110
Output Capacitance
Coss
34
Reverse Transfer Capacitance
Crss
VDS=10V,VGS=0V
f=1MHz
16
pF
Td(on)
5
10
Turn-On Time
tr
8
15
Td(off)
10
18
Turn-Off Time
tf
VDD=10V, RL=10 , ID=1.0A,
VGEN=4.5V, RG=6
1.2
2.8
nS


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