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STN6303 Datasheet(PDF) 1 Page - Stanson Technology

Part No. STN6303
Description  STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STN6303 Datasheet(HTML) 1 Page - Stanson Technology

   
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STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6303 2008. V1
DESCRIPTION
STN6303 is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.
PIN CONFIGURATION
SOT-363 / SC70-6L
Y: Year
W: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN6303
SOT-363 / SC70-6L
53
※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)
FEATURE
23V/0.5A, RDS(ON) = 400m-ohm@VGS =4.5V
23V/0.75A, RDS(ON) =550m-ohm@VGS =2.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-363 / SC70-6L package design
53YW
D1
G2
S2
S1
G
D2


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