NCV7420

http://onsemi.com

8

Electrical Characteristics

Definitions

All voltages are referenced to GND (Pin 11). Positive currents flow into the IC.

Table 6. ABSOLUTE MAXIMUM RATINGS – 3.3 V and 5 V versions

Symbol

Parameter

Min

Max

Unit

Vbb

Battery voltage on pin Vbb (Note 9)

−0.3

+45

V

Vcc

DC voltage on pin Vcc

0

+7

V

I_Vcc

Current delivered by the Vcc regulator

50

mA

V_LIN

LIN bus voltage (Note 10)

−45

+45

V

V_INH

DC voltage on inhibit pin

−0.3

Vbb + 0.3

V

V_WAKE

DC voltage on WAKE pin

−45

45

V

V_Dig_in

DC input voltage on pins TxD, RxD, EN, STB

−0.3

Vcc + 0.3

V

Tjunc

Maximum junction temperature

−40

+165

°C

Vesd

Electrostatic discharge voltage on all pins; HBM (Note 11)

−2

+2

kV

Electrostatic discharge voltage on LIN, INH, WAKE and Vbb towards GND; HBM (Note

11)

−4

+4

kV

Electrostatic discharge on LIN, WAKE and Vbb; system HBM (Note 12)

−8

+8

kV

Electrostatic discharge voltage on all pins; CDM (Note 14)

−500

+500

V

Vesd

(EMC/ESD

improved

versions)

Electrostatic discharge voltage on all pins; HBM (Note 11)

−4

+4

kV

Electrostatic discharge voltage on LIN, INH, WAKE and Vbb towards GND; HBM (Note

11)

−6

+6

kV

Electrostatic discharge on LIN, WAKE and Vbb; system HBM (Note 13)

−12

+12

kV

Electrostatic discharge voltage on all pins; CDM (Note 14)

−750

+750

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

9. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, 3b, and 5. The device complies with functional class

C; class A can be reached depending on the application and external components.

10.The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, and 3b. The device complies with functional class

C; class A can be reached depending on the application and external components.

11. Equivalent to discharging a 100 pF capacitor through a 1500 W resistor.

12.Equivalent to discharging a 150 pF capacitor through a 330 W resistor conform to IEC Standard 61000−4−2. LIN bus filter 220 pF, Vbb blocking

capacitor 100 nF, 3k3/10n R/C network on WAKE.

13.Equivalent to discharging a 150 pF capacitor through a 330 W resistor conform to IEC Standard 61000−4−2. No filter on LIN, Vbb blocking

capacitor 100 nF, 3k3/10n R/C network on WAKE.

14.Charged device model according ESD-STM5.3.1.