CMLT3410 NPN

CMLT7410 PNP

CMLT3474 NPN/PNP

SURFACE MOUNT

DUAL LOW VCE(SAT)

SILICON TRANSISTORS

DESCRIPTION:

These CENTRAL SEMICONDUCTOR dual devices

are low VCE(SAT) silicon transistors in a PICOmini™

surface mount package designed for small signal

general purpose amplifier and switching applications

requiring low collector emitter saturation voltage.

MARKING CODES: CMLT3410: C34

CMLT7410: C74

CMLT3474: C37

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

1.5

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

NPN

PNP

SYMBOL

TEST CONDITIONS

MIN

TYP

TYP

MAX

UNITS

ICBO

VCB=40V

100

nA

IEBO

VEB=6.0V

100

nA

BVCBO

IC=100µA

40

V

BVCEO

IC=10mA

25

V

BVEBO

IE=100µA

6.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

25

30

50

mV

VCE(SAT)

IC=100mA, IB=10mA

40

50

75

mV

VCE(SAT)

IC=200mA, IB=20mA

80

95

150

mV

VCE(SAT)

IC=500mA, IB=50mA

190

205

250

mV

VCE(SAT)

IC=800mA, IB=80mA

290

320

400

mV

VCE(SAT)

IC=1.0A, IB=100mA

360

400

450

mV

VBE(SAT)

IC=800mA, IB=80mA

1.1

V

VBE(ON)

VCE=1.0V, IC=10mA

0.9

V

hFE

VCE=1.0V, IC=10mA

100

hFE

VCE=1.0V, IC=100mA

100

300

hFE

VCE=1.0V, IC=500mA

100

hFE

VCE=1.0V, IC=1.0A

50

fT

VCE=10V, IC=50mA, f=100MHz

100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz (CMLT3410)

6.0

10

pF

Cob

VCB=10V, IE=0, f=1.0MHz (CMLT7410)

10

15

pF

SOT-563 CASE

R3 (1-August 2011)

www.centra lsemi.com