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CY7C1351G-100AXC Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C1351G-100AXC
Description  4-Mbit (128 K 횞 36) Flow-Through SRAM with NoBL??Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1351G-100AXC Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY7C1351G
Document Number: 38-05513 Rev. *K
Page 10 of 20
ISB3
Automatic CE power-down
current – CMOS inputs
VDD = Max, device deselected,
VIN > VDDQ – 0.3 V or VIN < 0.3 V,
f = fMAX, inputs switching
7.5-ns cycle,
133 MHz
–75
mA
10-ns cycle,
100 MHz
–65
mA
ISB4
Automatic CE power-down
current – TTL inputs
VDD = Max, device deselected,
VIN > VIH or V IN < VIL,
f = 0, inputs static
All speeds
45
mA
Electrical Characteristics (continued)
Over the Operating Range
Parameter [9, 10]
Description
Test Conditions
Min
Max
Unit
Capacitance
Parameter [11]
Description
Test Conditions
100-pin TQFP
Max
Unit
CIN
Input capacitance
TA = 25 °C, f = 1 MHz,
VDD = 3.3 V, VDDQ=3.3 V
5pF
CCLOCK
Clock input capacitance
5pF
CI/O
I/O capacitance
5pF
Thermal Resistance
Parameter [11]
Description
Test Conditions
100-pin TQFP
Package
Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
30.32
°C/W
JC
Thermal resistance
(junction to case)
6.85
°C/W
Note
11. Tested initially and after any design or process changes that may affect these parameters.


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