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NVMFS5844NLT3G Datasheet(PDF) 1 Page - ON Semiconductor |
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NVMFS5844NLT3G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 3 1 Publication Order Number: NTMFS5844NL/D NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- rent RYJ−mb (Notes 1, 2, 3, 4) Steady State Tmb = 25°C ID 61 A Tmb = 100°C 43 Power Dissipation RYJ−mb (Notes 1, 2, 3) Tmb = 25°C PD 107 W Tmb = 100°C 54 Continuous Drain Cur- rent RqJA (Notes 1, 3, 4) Steady State TA = 25°C ID 11.2 A TA = 100°C 8.0 Power Dissipation RqJA (Notes 1 & 3) TA = 25°C PD 3.7 W TA = 100°C 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 247 A Current Limited by Package (Note 4) TA = 25°C IDmaxPkg 80 A Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C Source Current (Body Diode) IS 60 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 31 A, L = 0.1 mH, RG = 25 W) EAS 48 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Mounting Board (top) − Steady State (Notes 2, 3) RYJ−mb 1.4 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 41 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. DFN5 (SO−8FL) CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 1 V(BR)DSS RDS(ON) MAX ID MAX 60 V 12 mW @ 10 V 61 A 16 mW @ 4.5 V G (4) S (1,2,3) N−CHANNEL MOSFET D (5) Device Package Shipping† ORDERING INFORMATION NTMFS5844NLT1G DFN5 (Pb−Free) 1500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 5844NL AYWZZ S S S G D D D D NVMFS5844NLT1G DFN5 (Pb−Free) 1500/Tape & Reel NVMFS5844NLT3G DFN5 (Pb−Free) 5000/Tape & Reel |
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