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NVMFS5844NLT3G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NVMFS5844NLT3G
Description  Power MOSFET 60 V, 61 A, 12 m, Single N.Channel
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMFS5844NLT3G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 3
1
Publication Order Number:
NTMFS5844NL/D
NTMFS5844NL,
NVMFS5844NL
Power MOSFET
60 V, 61 A, 12 mW, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20
V
Continuous Drain Cur-
rent RYJ−mb (Notes 1,
2, 3, 4)
Steady
State
Tmb = 25°C
ID
61
A
Tmb = 100°C
43
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Tmb = 25°C
PD
107
W
Tmb = 100°C
54
Continuous Drain Cur-
rent RqJA (Notes 1, 3,
4)
Steady
State
TA = 25°C
ID
11.2
A
TA = 100°C
8.0
Power Dissipation
RqJA (Notes 1 & 3)
TA = 25°C
PD
3.7
W
TA = 100°C
1.8
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
247
A
Current Limited by Package
(Note 4)
TA = 25°C
IDmaxPkg
80
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS
60
A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 31 A, L = 0.1 mH, RG = 25 W)
EAS
48
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb
1.4
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
1
V(BR)DSS
RDS(ON) MAX
ID MAX
60 V
12 mW @ 10 V
61 A
16 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS5844NLT1G
DFN5
(Pb−Free)
1500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
5844NL
AYWZZ
S
S
S
G
D
D
D
D
NVMFS5844NLT1G
DFN5
(Pb−Free)
1500/Tape & Reel
NVMFS5844NLT3G
DFN5
(Pb−Free)
5000/Tape & Reel


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