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NTLLD4901NFTWG Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTLLD4901NFTWG
Description  Dual N-Channel Power MOSFET with Integrated Schottky
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTLLD4901NFTWG Datasheet(HTML) 2 Page - ON Semiconductor

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NTLLD4901NF
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MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Q1
VDSS
30
V
Drain−to−Source Voltage
Q2
Gate−to−Source Voltage
Q1
VGS
±20
V
Gate−to−Source Voltage
Q2
Continuous Drain Current RqJA (Note 1)
Steady
State
TA = 25°C
Q1
ID
8.3
A
TA = 85°C
6.0
TA = 25°C
Q2
9.6
TA = 85°C
6.9
Power Dissipation
RqJA (Note 1)
TA = 25°C
Q1
PD
1.82
W
Q2
1.88
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
Q1
ID
11
A
TA = 85°C
8
TA = 25°C
Q2
13
TA = 85°C
9.1
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
Q1
PD
3.23
W
Q2
3.27
Continuous Drain Current
RqJA (Note 2)
TA = 25°C
Q1
ID
5.5
A
TA = 85°C
4.0
TA = 25°C
Q2
6.3
TA = 85°C
4.5
Power Dissipation
RqJA (Note 2)
TA = 25 °C
Q1
PD
0.80
W
Q2
0.81
Pulsed Drain Current
TA = 25°C
tp = 10 ms
Q1
IDM
65
A
Q2
70
Operating Junction and Storage Temperature
Q1
TJ, TSTG
−55 to +150
°C
Q2
Source Current (Body Diode)
Q1
IS
4.2
A
Q2
6.0
Drain to Source DV/DT
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V,
VGS = 10 V, IL = 9.0 Apk, L = 0.3 mH, RG = 25 W)
Q1
EAS
12
mJ
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V,
VGS = 10 V, IL = 9.5 Apk, L = 0.3 mH, RG = 25 W)
Q2
EAS
13.5
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2


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