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NTLLD4901NFTWG Datasheet(PDF) 2 Page - ON Semiconductor |
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NTLLD4901NFTWG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NTLLD4901NF http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Q1 VDSS 30 V Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 VGS ±20 V Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C Q1 ID 8.3 A TA = 85°C 6.0 TA = 25°C Q2 9.6 TA = 85°C 6.9 Power Dissipation RqJA (Note 1) TA = 25°C Q1 PD 1.82 W Q2 1.88 Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C Q1 ID 11 A TA = 85°C 8 TA = 25°C Q2 13 TA = 85°C 9.1 Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Q1 PD 3.23 W Q2 3.27 Continuous Drain Current RqJA (Note 2) TA = 25°C Q1 ID 5.5 A TA = 85°C 4.0 TA = 25°C Q2 6.3 TA = 85°C 4.5 Power Dissipation RqJA (Note 2) TA = 25 °C Q1 PD 0.80 W Q2 0.81 Pulsed Drain Current TA = 25°C tp = 10 ms Q1 IDM 65 A Q2 70 Operating Junction and Storage Temperature Q1 TJ, TSTG −55 to +150 °C Q2 Source Current (Body Diode) Q1 IS 4.2 A Q2 6.0 Drain to Source DV/DT dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 9.0 Apk, L = 0.3 mH, RG = 25 W) Q1 EAS 12 mJ Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 9.5 Apk, L = 0.3 mH, RG = 25 W) Q2 EAS 13.5 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2 |
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