NTD5805NT4G datasheet(2/6 Pages) ONSEMI

Part #	NTD5805NT4G

Description	Power MOSFET 40 V, 51 A, Single N.Channel, DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD5805N, NVD5805N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

40.8

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 40 V

TJ = 25°C

1.0

mA

TJ = 150°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.5

3.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

7.04

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 15 A

7.6

9.5

mW

VGS = 5.0 V, ID = 10 A

10.9

16

Forward Transconductance

gFS

VDS = 15 V, ID = 15 A

8.54

S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

1725

pF

Output Capacitance

Coss

220

Reverse Transfer Capacitance

Crss

160

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 32 V,

ID = 30 A

33

80

nC

Threshold Gate Charge

QG(TH)

2.0

Gate−to−Source Charge

QGS

7.2

Gate−to−Drain Charge

QGD

9.8

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(on)

VGS = 10 V, VDD = 32 V,

ID = 30 A, RG = 2.5 W

10.2

ns

Rise Time

tr

17.9

Turn−Off Delay Time

td(off)

22.9

Fall Time

tf

4.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 10 A

TJ = 25°C

0.83

1.2

V

TJ = 150°C

0.65

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 30 A

24.8

ns

Charge Time

ta

14.6

Discharge Time

tb

10.2

Reverse Recovery Charge

QRR

15.5

nC

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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