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NTD5805N Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD5805N Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTD5805N, NVD5805N http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 40.8 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 mA TJ = 150°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 3.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 7.04 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 15 A 7.6 9.5 mW VGS = 5.0 V, ID = 10 A 10.9 16 Forward Transconductance gFS VDS = 15 V, ID = 15 A 8.54 S CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 1725 pF Output Capacitance Coss 220 Reverse Transfer Capacitance Crss 160 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V, ID = 30 A 33 80 nC Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS 7.2 Gate−to−Drain Charge QGD 9.8 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(on) VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W 10.2 ns Rise Time tr 17.9 Turn−Off Delay Time td(off) 22.9 Fall Time tf 4.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.83 1.2 V TJ = 150°C 0.65 Reverse Recovery Time tRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A 24.8 ns Charge Time ta 14.6 Discharge Time tb 10.2 Reverse Recovery Charge QRR 15.5 nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. |
Similar Part No. - NTD5805N_12 |
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Similar Description - NTD5805N_12 |
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