MGSF1P02LT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. On–Resistance versus Drain Current

0

0.2

0.4

0.6

0.8

0.35

0.5

0.55

Figure 4. On–Resistance versus Drain Current

ID, DRAIN CURRENT (AMPS)

Figure 5. On–Resistance Variation with Temperature

0.8

1

0.001

0.1

1

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Charge

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

25

°C

VGS = 4.5 V

VGS = 10 V

ID = 1.5 A

– 55

–5

45

95

145

TJ = 150°C

0.45

0.85

0.9

0.95

0

0.2

0.4

0.6

1.8

0.4

0.01

–55

°C

25

°C

0.8

Figure 8. Capacitance

0

0.4

0.8

1.2

1.6

0.2

0.32

0.36

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

0.28

0.24

0

10

6

2

0

QT, TOTAL GATE CHARGE (pC)

8

4

1000

6000

VDS = 16 V

TJ = 25°C

2000

ID = 1.5 A

3000

VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)

0

4

8

10

2

6

Ciss

Coss

Crss

1000

100

VGS = 0 V

f = 1 MHz

TJ = 25°C

10

0.1

0.3

0.5

0.7

150

°C

–55

°C

0.4

0.3

0.34

0.26

0.22

0.38

0.2

0.6

1

1.4

1.05

1.25

1.1

1.15

1.2

VGS = 4.5 V

ID = .75 A

5000

4000

1

1.2

1.4

1.6

150

°C

25

°C

–55

°C