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NGD15N41CL Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NGD15N41CL
Description  Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NGD15N41CL Datasheet(HTML) 3 Page - ON Semiconductor

 
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.0 A,
VGE = 4.0 V
TJ = 25°C
1.0
1.6
1.8
VDC
TJ = 150°C
0.9
1.5
1.8
TJ = −40°C
1.1
1.65
1.9*
IC = 8.0 A,
VGE = 4.0 V
TJ = 25°C
1.3
1.8
2.0*
TJ = 150°C
1.2
1.7
1.9
TJ = −40°C
1.4
1.8
2.0*
IC = 10 A,
VGE = 4.0 V
TJ = 25°C
1.4
2.0
2.2
TJ = 150°C
1.5
2.0
2.3*
TJ = −40°C
1.4
2.0
2.2
IC = 10 A,
VGE = 4.5 V
TJ = 25°C
1.3
1.9
2.1
TJ = 150°C
1.3
1.9
2.1
TJ = −40°C
1.4
1.95
2.1*
Forward Transconductance
gfs
VCE = 5.0 V, IC = 6.0 A
TJ = −40°C to
150°C
8.0
15
25
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to
150°C
400
650
1000
pF
Output Capacitance
COSS
30
55
100
Transfer Capacitance
CRSS
3.0
4.5
8.0
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Inductive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
TJ = 25°C
4.0
10
μSec
TJ = 150°C
4.5
10
Fall Time (Inductive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
TJ = 25°C
6.0
12
TJ = 150°C
10
12
Turn−Off Delay Time (Resistive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
3.0
10
μSec
TJ = 150°C
3.5
10
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
8.0
15
TJ = 150°C
12
15
Turn−On Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
0.7
4.0
μSec
TJ = 150°C
0.7
4.0
Rise Time
tr
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
4.0
7.0
TJ = 150°C
5.0
7.0
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.


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