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NGD15N41CL Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NGD15N41CL
Description  Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NGD15N41CL Datasheet(HTML) 2 Page - ON Semiconductor

 
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C
EAS
250
200
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.4
°C/W
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
RθJA
100
D2PAK (Note 1)
RθJA
50
TO−220
RθJA
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
IC = 2.0 mA
TJ = −40°C to
150°C
380
410
440
VDC
IC = 10 mA
TJ = −40°C to
150°C
380
410
440
Zero Gate Voltage Collector Current
ICES
VCE = 350 V,
VGE = 0 V
TJ = 25°C
2.0
20
μADC
TJ = 150°C
10
40*
TJ = −40°C
1.0
10
Reverse Collector−Emitter Leakage Current
IECS
VCE = −24 V
TJ = 25°C
0.7
2.0
mA
TJ = 150°C
12
25*
TJ = −40°C
0.1
1.0
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
TJ = 25°C
27
33
37
VDC
TJ = 150°C
30
36
40
TJ = −40°C
25
31
35
Gate−Emitter Clamp Voltage
BVGES
IG = 5.0 mA
TJ = −40°C to
150°C
11
13
15
VDC
Gate−Emitter Leakage Current
IGES
VGE = 10 V
TJ = −40°C to
150°C
384
640
1000
μADC
Gate Resistor
RG
TJ = −40°C to
150°C
70
Ω
Gate Emitter Resistor
RGE
TJ = −40°C to
150°C
10
16
26
k
Ω
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
TJ = 25°C
1.1
1.4
1.9
VDC
TJ = 150°C
0.75
1.0
1.4
TJ = −40°C
1.2
1.6
2.1*
Threshold Temperature Coefficient
(Negative)
3.4
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.


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