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NGD15N41CL Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NGD15N41CL
Description  Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NGD15N41CL Datasheet(HTML) 1 Page - ON Semiconductor

 
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© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 8
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
Ignition IGBT 15 A, 410 V
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
440
VDC
Collector−Gate Voltage
VCER
440
VDC
Gate−Emitter Voltage
VGE
15
VDC
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
15
50
ADC
AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
107
0.71
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
TO−220AB
CASE 221A
STYLE 9
1
2
3
4
1
2
3
4
D2PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 2
http://onsemi.com
1 2
3
4
C
E
G
RG
RGE


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