© Semiconductor Components Industries, LLC, 2011

December, 2011 − Rev. 1

1

Publication Order Number:

NGB8207AN/D

NGB8207AN, NGB8207ABN

Ignition IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

Stress Applied to Load

Microprocessor Devices

Applications

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

365

V

Gate−Emitter Voltage

$15

V

Collector Current−Continuous

20

50

Continuous Gate Current

1.0

mA

Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)

20

mA

ESD (Charged−Device Model)

ESD

2.0

kV

ESD (Human Body Model)

R = 1500 W, C = 100 pF

ESD

8.0

kV

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

500

V

Derate above 25°C (Note 1)

165

1.1

W

W/°C

Operating & Storage Temperature Range

−55 to

+175

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Assuming infinite heatsink Case−to−Ambient

20 AMPS, 365 VOLTS

C

E

G

http://onsemi.com

Device

Package

ORDERING INFORMATION

NGB8207ANT4G

(Pb−Free)

800 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 418B

STYLE 4

MARKING DIAGRAM

NGB

8207AxG

AYWW

1

Gate

3

Emitter

4

Collector

2

Collector

NGB8207Ax = Device Code

x = N or B

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1

NGB8207ABNT4G

(Pb−Free)

800 / Tape & Reel