NGB8207N_11 datasheet(5/7 Pages) ONSEMI

Part #	NGB8207N

Description	Ignition IGBT 20 A, 365 V, N.Channel D2PAK

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NGB8207N, NGB8207BN

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TYPICAL ELECTRICAL CHARACTERISTICS

6.0 V

6.5 V

10 V

5.0 V

TJ, JUNCTION TEMPERATURE (°C)

−50

75

100

25

0

125

−25

175

1000

1

100,000

10,000

60

40

30

20

0

Figure 7. On−Region Characteristics

@ TJ = 1755C

Figure 8. Transfer Characteristics

Figure 9. Collector−to−Emitter Leakage

Current vs. Temperature

Figure 10. Gate Threshold Voltage vs.

Temperature

VGE, GATE−TO−EMITTER VOLTAGE (V)

3.0

2.0

5.0

6.0

4.0

10

50

150

10

100

2.0

1.75

1.25

1.0

0.5

TJ, JUNCTION TEMPERATURE (°C)

−50

75

0

175

25

100

0.75

1.0

VCE ≥ 5.0 V

50

5.5 V

VGE = 2.0 V

40

10

2

0

60

20

30

50

10

13

5

7

VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)

06

48

9

TJ = 175°C

TJ = 25°C

TJ = −40°C

VCE = −24 V

VCE = 320 V

1.5

−25

50

125 150

MEAN + 4s

MEAN − 4s

MEAN

1

0.1

10

100

Figure 11. Capacitance Variation

Figure 12. Resistive Switching Time Variation

vs. Temperature

TEMPERATURE (°C)

50

75

25

100

175

150

125

100

10

1

1000

10,000

COLLECTOR−TO−EMITTER VOLTAGE (V)

40

20

100

200

140

0

120

TJ = 25°C

VGE = 0 V

td(on)

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 10 A

80

60

160 180

Ciss

Coss

Crss

td(off)

tf

tr

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