NGB8204ANT4G datasheet(2/8 Pages) ONSEMI

Part #	NGB8204ANT4G

Description	Ignition IGBT 18 Amps, 400 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NGB8204N, NGB8204AN

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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic

Symbol

Value

Unit

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C

EAS

400

300

mJ

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C

EAS(R)

2000

mJ

MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C)

Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)

tsc1

750

ms

Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)

tsc2

5.0

ms

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.3

°C/W

Thermal Resistance, Junction−to−Ambient

D2PAK (Note 1)

RqJA

50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)

TL

275

°C

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage

BVCES

IC = 2.0 mA

TJ = −40°C to 150°C

380

395

420

VDC

IC = 10 mA

TJ = −40°C to 150°C

390

405

430

Zero Gate Voltage Collector Current

ICES

VCE = 350 V,

VGE = 0 V

TJ = 25°C

−

2.0

10

mADC

TJ = 150°C

−

10

40*

TJ = −40°C

−

1.0

10

Reverse Collector−Emitter Leakage

Current

IECS

VCE = −24 V

TJ = 25°C

−

0.7

1.0

mA

TJ = 150°C

−

12

25*

TJ = −40°C

−

0.1

1.0

Reverse Collector−Emitter Clamp

Voltage

BVCES(R)

IC = −75 mA

TJ = 25°C

27

33

37

VDC

TJ = 150°C

30

36

40

TJ = −40°C

25

32

35

Gate−Emitter Clamp Voltage

BVGES

IG = 5.0 mA

TJ = −40°C to 150°C

11

13

15

VDC

Gate−Emitter Leakage Current

IGES

VGE = 10 V

TJ = −40°C to 150°C

384

640

700

mADC

Gate Emitter Resistor

RGE

−

TJ = −40°C to 150°C

10

16

26

kW

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGE(th)

IC = 1.0 mA,

VGE = VCE

TJ = 25°C

1.1

1.4

1.9

VDC

TJ = 150°C

0.75

1.0

1.4

TJ = −40°C

1.2

1.6

2.1*

Threshold Temperature Coefficient

(Negative)

−

3.4

−

mV/°C

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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