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NCV8702SN33T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV8702SN33T1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 20 page NCV8702 http://onsemi.com 3 Table 3. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, TSOP−5, Thermal Resistance, Junction−to−Air Thermal Characterization Parameter, Junction−to−Lead (Pin 2) qJA yJA 224 115 °C/W Thermal Characteristics, XDFN6 1.5 x 1.5 mm Thermal Resistance, Junction−to−Air Thermal Characterization Parameter, Junction−to−Board qJA yJB 149 81 °C/W 3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area. Table 4. ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 2.0 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF. Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 125°C respectively. (Note 4) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage VIN 2.0 5.5 V Undervoltage lock−out VIN rising UVLO 1.2 1.6 1.9 V Output Voltage Accuracy VOUT + 0.3 V ≤ VIN ≤ 5.5 V, IOUT = 0 − 200 mA VOUT −2 +2 % Line Regulation VOUT + 0.3 V ≤ VIN ≤ 4.5 V, IOUT = 10 mA RegLINE 290 mV/V VOUT + 0.3 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA RegLINE 440 mV/V Load Regulation IOUT = 0 mA to 200 mA RegLOAD 13 mV/mA Dropout voltage (Note 5) IOUT = 200 mA, VOUT(nom) = 2.5 V VDO 140 200 mV Output Current Limit VOUT = 90% VOUT(nom) ICL 220 385 550 mA Quiescent current IOUT = 0 mA IQ 10 16 mA Ground current IOUT = 2 mA IGND 60 mA IOUT = 200 mA IGND 160 mA Shutdown current (Note 6) VEN ≤ 0.4 V IDIS 0.005 mA VEN ≤ 0.4 V, VIN = 4.5 V IDIS 0.01 1 mA EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing VEN_HI VEN_LO 0.9 0.4 V EN Pin Input Current VEN = VIN = 5.5 V IEN 110 500 nA Turn−On Time (Note 7) COUT = 1.0 mF, IOUT = 1 mA tON 300 ms Output Voltage Overshoot on Start−up (Note 8) VEN = 0 V to 0.9 V, 0 ≤ IOUT ≤ 200 mA DVOUT 2 % Load Transient IOUT = 1 mA to 200 mA or IOUT = 200 mA to 1 mA in 10 ms, COUT = 1 mF DVOUT −30/+30 mV Power Supply Rejection Ratio VIN = 3 V, VOUT = 2.5 V IOUT = 150 mA f = 100 Hz f = 1 kHz f = 10 kHz PSRR 70 68 53 dB Output Noise Voltage VOUT = 2.5 V, VIN = 3 V, IOUT = 200 mA f = 100 Hz to 100 kHz VN 11 mVrms Active Discharge Resistance VEN < 0.4 V RDIS 1 kW Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH − 20 − °C 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V. 6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state. 7. Turn−On time is measured from the assertion of EN pin to the point when the output voltage reaches 0.98 VOUT(NOM) 8. Guaranteed by design. |
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