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NCV8702SN33T1G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCV8702SN33T1G
Description  200 mA, Ultra-Low Quiescent Current, Ultra-Low Noise, LDO Linear Voltage Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8702SN33T1G Datasheet(HTML) 3 Page - ON Semiconductor

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3
Table 3. THERMAL CHARACTERISTICS (Note 3)
Rating
Symbol
Value
Unit
Thermal Characteristics, TSOP−5,
Thermal Resistance, Junction−to−Air
Thermal Characterization Parameter, Junction−to−Lead (Pin 2)
qJA
yJA
224
115
°C/W
Thermal Characteristics, XDFN6 1.5 x 1.5 mm
Thermal Resistance, Junction−to−Air
Thermal Characterization Parameter, Junction−to−Board
qJA
yJB
149
81
°C/W
3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area.
Table 4. ELECTRICAL CHARACTERISTICS
−40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 2.0 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF.
Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 125°C respectively. (Note 4)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
VIN
2.0
5.5
V
Undervoltage lock−out
VIN rising
UVLO
1.2
1.6
1.9
V
Output Voltage Accuracy
VOUT + 0.3 V ≤ VIN ≤ 5.5 V, IOUT = 0 − 200 mA
VOUT
−2
+2
%
Line Regulation
VOUT + 0.3 V ≤ VIN ≤ 4.5 V, IOUT = 10 mA
RegLINE
290
mV/V
VOUT + 0.3 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA
RegLINE
440
mV/V
Load Regulation
IOUT = 0 mA to 200 mA
RegLOAD
13
mV/mA
Dropout voltage (Note 5)
IOUT = 200 mA, VOUT(nom) = 2.5 V
VDO
140
200
mV
Output Current Limit
VOUT = 90% VOUT(nom)
ICL
220
385
550
mA
Quiescent current
IOUT = 0 mA
IQ
10
16
mA
Ground current
IOUT = 2 mA
IGND
60
mA
IOUT = 200 mA
IGND
160
mA
Shutdown current (Note 6)
VEN ≤ 0.4 V
IDIS
0.005
mA
VEN ≤ 0.4 V, VIN = 4.5 V
IDIS
0.01
1
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
0.9
0.4
V
EN Pin Input Current
VEN = VIN = 5.5 V
IEN
110
500
nA
Turn−On Time (Note 7)
COUT = 1.0 mF, IOUT = 1 mA
tON
300
ms
Output Voltage Overshoot on
Start−up (Note 8)
VEN = 0 V to 0.9 V, 0 ≤ IOUT ≤ 200 mA
DVOUT
2
%
Load Transient
IOUT = 1 mA to 200 mA or
IOUT = 200 mA to 1 mA in 10 ms, COUT = 1 mF
DVOUT
−30/+30
mV
Power Supply Rejection Ratio
VIN = 3 V, VOUT = 2.5 V
IOUT = 150 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
PSRR
70
68
53
dB
Output Noise Voltage
VOUT = 2.5 V, VIN = 3 V, IOUT = 200 mA
f = 100 Hz to 100 kHz
VN
11
mVrms
Active Discharge Resistance
VEN < 0.4 V
RDIS
1
kW
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
20
°C
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA
= 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V.
6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state.
7. Turn−On time is measured from the assertion of EN pin to the point when the output voltage reaches 0.98 VOUT(NOM)
8. Guaranteed by design.


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