NTLUD3A50PZTAG datasheet(4/6 Pages) ONSEMI

Part #	NTLUD3A50PZTAG

Description	??0 V, ??.6 A, Cool Dual P?묬hannel, 2.0x2.0x0.55 mm UDFN Package

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NTLUD3A50PZ

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Threshold Voltage

TJ, JUNCTION TEMPERATURE (°C)

VGS = 0 V

TJ = 25°C

f = 1 MHz

Ciss

Coss

Crss

VDS = −15 V

ID = −3.0 A

TJ = 25°C

VDS

VGS

QGS

QGD

VGS = −4.5 V

VDD = −15 V

ID = −3.0 A

td(off)

td(on)

tf

tr

TJ = 25°C

TJ = −55°C

TJ = 125°C

ID = −250 mA

1.0

10

100

1000

1

10

100

0.1

1.0

10.0

50

25

0

25

50

75

100

125

150

0

200

400

600

800

1000

1200

1400

1600

1800

0

2

4

6

8

10

12

14

16

18

20

0

3

6

9

12

15

18

0

1

2

3

4

5

02

468

10

12

QT

0.3

0.4

0.6

0.8

1.0

1.1

0.15

0.25

0.35

0.45

0.55

0.65

0.75

0.85

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.01

0.1

1

10

100

0.1

1

10

100

0 ≤ VGS ≤ −8 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100 ms

1 ms

10 ms

dc

0.5

0.7

0.9

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ON Semiconductor	NTLUD3A50PZTAG	133Kb / 6P	Power MOSFET February, 2014 ??Rev. 2

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