© Semiconductor Components Industries, LLC, 2012

August, 2012 − Rev. 1

1

Publication Order Number:

NTLUD3A50PZ/D

NTLUD3A50PZ

Power MOSFET

−20 V, −5.6 A, mCoolt Dual P−Channel,

2.0x2.0x0.55 mm UDFN Package

Features

Conduction

Compliant

Applications

Products, such as Cell Phones, PMP, DSC, GPS, and others

Parameter

Symbol

Value

Units

Drain-to-Source Voltage

−20

V

Gate-to-Source Voltage

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

−4.4

A

−3.2

t ≤ 5 s

−5.6

Power Dissipa-

tion (Note 1)

Steady

State

1.4

W

t ≤ 5 s

2.2

Continuous Drain

Current (Note 2)

Steady

State

−2.8

A

−2.0

Power Dissipation (Note 2)

0.5

W

Pulsed Drain Current

tp = 10 ms

−13

A

Operating Junction and Storage

Temperature

-55 to

150

°C

Source Current (Body Diode) (Note 2)

−1.0

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces) based on both FETs on.

2. Surface-mounted on FR4 board using the minimum recommended pad size

http://onsemi.com

−20 V

70 mW @ −2.5 V

50 mW @ −4.5 V

MOSFET

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

AA = Specific Device Code

M = Date Code

G = Pb−Free Package

AA MG

G

1

115 mW @ −1.8 V

MARKING

DIAGRAM

175 mW @ −1.5 V

(Top View)

(Note: Microdot may be in either location)

−5.6 A

G1

S1

P−Channel MOSFET

D1

UDFN6

CASE 517BF

mCOOLt

G2

S2

D2

1

6