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ISL6844IUZ Datasheet(PDF) 2 Page - Intersil Corporation

Part # ISL6844IUZ
Description  ISL6844 Reference Design: ISL6844EVAL3Z
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL6844IUZ Datasheet(HTML) 2 Page - Intersil Corporation

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Application Note 1612
2
AN1612.1
November 28, 2011
Transformer Core Selection
From Figure 2, the RMS current in the transformer primary side
can be calculated from:
The RMS current in each transformer secondary side can also be
computed from:
The transformer used in this design is Pulse’s PA3374Nl. It is a
gapped ferrite toroid core, which has the following parameters:
•Ae = 4.3mm2
•AL = 35nH/n2
•le = 13.1mm
•Ve = 56.5mm3
This section provides general guideline to calculate the number
of turn and wire size. For more details on designing transformer
parameters, please contact a Pulse representative.
The number of turns on the primary side, Np, can be determined
from:
Therefore, the primary side has 26 turns. With the turn ratio of 1,
the secondary side and the auxiliary primary side also have 26
turns.
Next the calculate the maximum flux density to make sure that it
is below the saturation limit.Where:
For the operating power level, the wire sizes of the primary,
secondary, and auxiliary windings are selected such that the
current density in each winding is about 0.25335 cm2/A (50
circular mil/A).
To simplify transformer winding, AWG#37 is used for all primary,
secondary and auxiliary windings.
Primary MOSFET Selection
The primary MOSFET needs to be able to handle the voltage
stress, given by:
As a good design practice, some margin is provided to this peak
stress voltage to accommodate transient spikes and for a good
reliable performance over time. Providing a 30% design margin
as a rule of thumb, the minimum rating on the primary MOSFET
needs to be 54.6V.
FIGURE 2. TYPICAL OPERATIONAL CURRENT WAVEFORMS
TSW
dTSW
d2TSW
d3TSW
ILM
Ipri
Isec,1
Isec,2
<Iout,1>
<Iout,2>
Ipk
Ipk
MOSFET ON
DIODES (D1 AND
D2) OFF
MOSFET OFF
DIODES (D1 AND
D2) ON
MOSFET OFF
DIODES (D1
AND D2) OFF
I
rms pri
,
I
pk
d
3
---
=
(EQ. 3)
1.06
0.35
3
-----------
0.362A
=
=
I
rms sec
,
I
pk
2
-------
d
2
3
------
=
(EQ. 4)
1.06
2
-----------
0.5
3
--------
0.216A
=
⋅⋅
=
N
p
LuH
[] 1000
×
A
L
------------------------------------
=
(EQ. 5)
23.8
1000
×
35
-------------------------------
26.07
=
=
B
max
L
M IMmax
,
N
p Ae
--------------------------------
=
(EQ. 6)
23.8
6
×10
1.06
26 4.3
2
×10
-------------------------------------------
4
×10
0.226T
=
=
A
wpri
,
0.25335 0.362
0.0917cm
2
=
(EQ. 7)
V
DSFET
V
=
IN MAX
,
nV
out
V
f
+
()
×
[]
+
(EQ. 8)
26.4
1
15
0.6
+
()
×
[] 42V
=
+
=


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