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NCP1611BDR2G Datasheet(PDF) 11 Page - ON Semiconductor |
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NCP1611BDR2G Datasheet(HTML) 11 Page - ON Semiconductor |
11 / 28 page NCP1611 http://onsemi.com 11 TYPICAL CHARACTERISTICS Figure 21. Error Amplifier Transconductance Gain vs. Temperature Figure 22. Ratio (VOUT Low Detect Threshold / VREF) vs. Temperature TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 150 175 200 225 250 93 94 95 96 97 98 Figure 23. Ratio (VOUT Low Detect Hysteresis / VREF) vs. Temperature Figure 24. VCONTROL Source Current when (VOUT Low Detect) is Activated for Dynamic Response Enhancer (DRE) vs. Temperature TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 0 0.1 0.2 0.3 0.4 0.5 140 160 180 200 220 240 260 280 Figure 25. Current Sense Voltage Threshold vs. Temperature Figure 26. Over−Current Protection Leading Edge Blanking vs. Temperature TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 480 485 490 495 505 510 515 520 120 140 160 180 220 240 260 280 110 90 70 30 10 −10 −30 −50 50 130 110 90 70 30 10 −10 −30 −50 50 130 110 90 70 30 10 −10 −30 −50 50 130 110 90 70 30 10 −10 −30 −50 50 130 110 90 70 30 10 −10 −30 −50 50 130 500 110 90 70 30 10 −10 −30 −50 50 130 200 |
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