© Semiconductor Components Industries, LLC, 2012

August, 2012 − Rev. 0

1

Publication Order Number:

DTC123J/D

MUN5235, DTC123JE,

DTC123JM3, NSBC123JF3

Digital Transistors (BRT)

R1 = 2.2 kW, R2 = 47 kW

NPN Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

Rating

Symbol

Max

Unit

Collector−Base Voltage

50

Vdc

Collector−Emitter Voltage

50

Vdc

Collector Current − Continuous

100

mAdc

Input Forward Voltage

12

Vdc

Input Reverse Voltage

5

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

R1

R2

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SC−75

CASE 463

STYLE 1

MARKING DIAGRAMS

XXX

= Specific Device Code

M

= Date Code*

G

=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SC−70/SOT−323

CASE 419

STYLE 3

SOT−723

CASE 631AA

STYLE 1

XX MG

G

1

XX M

1

XX M

1

PIN CONNECTIONS

SOT−1123

CASE 524AA

STYLE 1

X M 1