MUN5131DW1, NSBA123EDXV6

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MUN5131DW1 (SOT−363) One Junction Heated

Total Device Dissipation

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

187

256

1.5

2.0

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

670

490

°C/W

MUN5131DW1 (SOT−363) Both Junction Heated (Note 3)

Total Device Dissipation

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

250

385

2.0

3.0

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

493

325

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

188

208

°C/W

Junction and Storage Temperature Range

−55 to +150

°C

NSBA123EDXV6 (SOT−563) One Junction Heated

Total Device Dissipation

(Note 1)

Derate above 25°C

(Note 1)

357

2.9

mW

mW/°C

Thermal Resistance,

Junction to Ambient

(Note 1)

350

°C/W

NSBA123EDXV6 (SOT−563) Both Junction Heated (Note 3)

Total Device Dissipation

(Note 1)

Derate above 25°C

(Note 1)

500

4.0

mW

mW/°C

Thermal Resistance,

Junction to Ambient

(Note 1)

250

°C/W

Junction and Storage Temperature Range

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. Both junction heated values assume total power is sum of two equally powered channels.