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MMBZ27VCWT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MMBZ27VCWT1G
Description  40 Watt Peak Power Zener Transient Voltage Suppressors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MMBZ27VCWT1G Datasheet(HTML) 2 Page - ON Semiconductor

   
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MMBZ27VCWT1G
http://onsemi.com
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Ppk
40
Watts
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25°C
°PD°
200
1.6
°mW°
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
618
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 4 and derate above TA = 25°C per Figure 5.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 1.1 V Max @ IF = 200 mA)
Device
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VC @ IPP (Note 4)
VBR
VBR (Note 3) (V)
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/5C
MMBZ27VCWT1G
AC
22
50
25.65
27
28.35
1.0
38
1.0
26
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 4 and derate per Figure 5


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