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IXTP02N120P Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTP02N120P Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXTP02N120P IXTY02N120P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Pins: 1 - Gate 2 - Drain TO-220 (IXTP) Outline TO-252 (IXTY) Outline Pins: 1 - Gate 2,4 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 0.2 A I SM Repetitive, Pulse Width Limited by T JM 0.8 A V SD I F = IS, VGS = 0V, Note 1 1.3 V t rr 1.6 μs I RM 3.5 A Q RM 2.8 μC I F = 0.2A, -di/dt = 50A/μs, V R = 100V, VGS = 0V Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 30V, ID = 0.5 • ID25, Note 1 0.12 0.20 S C iss 104 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 8.6 pF C rss 1.9 pF t d(on) 6 ns t r 10 ns t d(off) 21 ns t f 39 ns Q g(on) 4.70 nC Q gs V GS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.37 nC Q gd 3.20 nC R thJC 3.8 °C/W R thCS TO-220 0.50 °C/W Resistive Switching Times V GS = 10V, VDS = 60V, ID = 0.5 • ID25, R G = 50Ω (External) |
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