T1G6001528-Q3 datasheet(1/4 Pages) TRIQUINT

Part #	T1G6001528-Q3

Description	55W, 28V, DC ??3.5GHz, GaN RF Power Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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T1G4005528-FS

55W, 28V, DC – 3.5GHz, GaN RF Power Transistor

Datasheet: Rev D 8/10/2011

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Functional Block Diagram

Applications

Military radar

•

Civilian radar

•

Professional and military radio

•

communications

Test instrumentation

•

Avionics

•

Widebandornarrowbandamplifiers

•

General Description

The TriQuint T1G4005528-FS is a 55 W (P

3dB)

discrete GaN on SiC HEMT which operates from

DC to 3.5 GHz. The device is constructed with

TriQuint’s proven 0.25 µm production process,

which features advanced field plate techniques

to optimize power and efficiency at high drain

bias operating conditions. This optimization can

potentially lower system costs in terms of fewer

amplifierline-upsandlowerthermalmanagement

costs.

Pin Configurations

Pin #

Symbol

1

RF Output

2

RF Input

Flange

Source

Ordering Information

Material No.

Part No.

Description

ECCN

1078974

T1G4005528-

FS

Packagedpart:

Flangeless

EAR99

1079752

T1G4005528-

FS-EVB1

3.0-3.5 GHz

Eval Brd

EAR99

Product Features

Frequency:DCto3.5GHz

•

LinearGain:>15dBat3.5GHz

•

OperatingVoltage:28V

•

Output Power (P

•

3dB):55Wat3.5GHz

Lead-free and RoHS compliant

•

Notes:

1. Unless specified otherwise,

dimensions are in millimeters

5.461

9.652

3.505

1.524

-.203

+.000

2

1

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T1G6001528-Q3 Datasheet(PDF) 1 Page - TriQuint Semiconductor

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