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EN8278B Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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EN8278B Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page CPH5901 No.8278-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10μA, VGS=0V --15 V Gate Cutoff Current IGSS VGS=--10V, VDS=0V --1.0 nA Cutoff Voltage VGS(off) VDS=5V, ID=100μA --0.2 --0.6 --1.4 V Drain Current IDSS VDS=5V, VGS=0V 6.0* 20.0* mA Forward Transfer Admittance | yfs | VDS=5V, VGS=0V, f=1kHz 25 50 mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1kHz 10 pF Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1kHzz 3.0 pF Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB [TR] Collector Cutoff Current ICBO VCB=35V, IE=0A 0.1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA DC Current Gain hFE VCE=6V, IC=1mA 135 400 Gain-Bandwidth Product fT VCE=6V, IC=10mA 200 MHz Output Capacitance Cob VCB=6V, f=1MHz 1.7 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.08 0.4 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 55 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V Turn-On Time ton See specified Test Circuit. 0.15 ns Storage Time tstg 0.75 ns Fall Time tf 0.20 ns * : The CPH5901 is classified by IDSS as follows : (unit : mA) Rank F G IDSS 6.0 to 12.0 10.0 to 20.0 Switching Time Test Circuit Ordering Information Device Package Shipping memo CPH5901F-TL-E CPH5 3,000pcs./reel Pb Free CPH5901G-TL-E CPH5 3,000pcs./reel + + 50Ω INPUT OUTPUT VR RB VCC=20V 220μF 470μF VBE= --5V PW=20μs IB1 IB2 D.C.≤1% 10IB1= --10IB2= IC=10mA RL |
Similar Part No. - EN8278B |
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Similar Description - EN8278B |
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