BAS16XV2T1_12 datasheet(2/4 Pages) ONSEMI

Part #	BAS16XV2T1

Description	Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 75 V)

(VR = 75 V, TJ = 150°C)

(VR = 25 V, TJ = 150°C)

IR

−

1.0

50

30

mA

Reverse Breakdown Voltage

(IBR = 100 mA)

V(BR)

75

−

V

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

VF

−

715

855

1000

1250

mV

Diode Capacitance (VR = 0, f = 1.0 MHz)

CD

−

2.0

pF

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns)

VFR

−

1.75

V

Reverse Recovery Time

(IF = IR = 10 mA, RL = 50 Ω)

trr

−

6.0

ns

Stored Charge

(IF = 10mA to VR = 5.0V, RL = 500 Ω)

QS

−

45

pC

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

Ω

0.1

μF

D.U.T.

VR

100

μH

0.1

μF

50

Ω OUTPUT

PULSE

GENERATOR

50

Ω INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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