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5LN01M-TL-H Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 5LN01M-TL-H
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

5LN01M-TL-H Datasheet(HTML) 2 Page - Sanyo Semicon Device

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5LN01M
No.6137-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
50
V
Zero-Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100μA
0.4
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=50mA
0.13
0.18
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=50mA, VGS=4V
6
7.8
Ω
RDS(on)2
ID=30mA, VGS=2.5V
7.1
9.9
Ω
RDS(on)3
ID=10mA, VGS=1.5V
10
20
Ω
Input Capacitance
Ciss
VDS=10V, f=1MHz
6.6
pF
Output Capacitance
Coss
4.7
pF
Reverse Transfer Capacitance
Crss
1.7
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18
ns
Rise Time
tr
42
ns
Turn-OFF Delay Time
td(off)
190
ns
Fall Time
tf
105
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=100mA
1.57
nC
Gate-to-Source Charge
Qgs
0.20
nC
Gate-to-Drain “Miller” Charge
Qgd
0.32
nC
Diode Forward Voltage
VSD
IS=100mA, VGS=0V
0.85
1.2
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
5LN01M-TL-E
MCP
3,000pcs./reel
Pb Free
5LN01M-TL-H
MCP
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
4V
0V
VIN
P.G
50Ω
G
S
D
ID=50mA
RL=500Ω
VDD=25V
VOUT
5LN01M
VIN


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