5LN01C-TB-H datasheet(1/7 Pages) SANYO

Part #	5LN01C-TB-H

Description	General-Purpose Switching Device Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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5LN01C

No.6555-1/7

Features

•

Low ON-resistance

•

Ultrahigh-speed switching

•

2.5V drive

Speciﬁcations

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

50

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

0.1

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

0.4

A

Allowable Power Dissipation

PD

0.25

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Package Dimensions

unit : mm (typ)

7013A-013

Ordering number : EN6555B

62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050

5LN01C

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package

: CP

• JEITA, JEDEC

: SC-59, TO-236, SOT-23, TO-236AB

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TB

Marking

Electrical Connection

SANYO Semiconductors

DATA SHEET

1 : Gate

2 : Source

3 : Drain

SANYO : CP

12

3

2.9

0.95

0.4

0.1

5LN01C-TB-E

5LN01C-TB-H

TB

YB

1

2

3

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