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EN8283A Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # EN8283A
Description  High-Voltage, High-Speed Switching Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

EN8283A Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SK3746
No.8283-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |
VDS=20V, ID=1A
0.7
1.4
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
10
13
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
380
pF
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
40
pF
Turn-ON Delay Time
td(on)
See Fig.2
12
ns
Rise Time
tr
37
ns
Turn-OFF Delay Time
td(off)
152
ns
Fall Time
tf
59
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=2A
37.5
nC
Gate-to-Source Charge
Qgs
2.7
nC
Gate-to-Drain “Miller” Charge
Qgd
20
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.88
1.2
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SK3746-1E
TO-3P-3L
30pcs./magazine
Pb Free
50
VDD
L
2SK3746
50
RG
10V
0V
PW=10μs
D.C.≤0.5%
P.G
RGS=50Ω
G
S
D
ID=1A
RL=200Ω
VDD=200V
VOUT
2SK3746
VIN
10V
0V
VIN


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