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TPS62203TDE1 Datasheet(PDF) 2 Page - Texas Instruments |
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TPS62203TDE1 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 4 page TPS62203-DIE SLVSBJ6 – AUGUST 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION BACKSIDE BOND PAD BOND PAD DIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION THICKNESS 11 mils. Silicon with backgrind Ground Al5Cu 650 nm Table 1. Bond Pad Coordinates in Microns(1) DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX FB 1 1173.51 92.97 1260.45 179.91 GND 2 1178.19 194.94 1265.13 281.88 EN 3 1167.21 874.62 1254.15 961.56 VI 4 102.87 880.38 189.81 967.32 GND 5 82.98 373.32 169.92 460.26 SW 6 256.05 334.08 342.99 421.02 (1) Substrate GND. 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated |
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