TPIC3322L datasheet(7/12 Pages) TI1

Part #	TPIC3322L

Description	3-CHANNEL COMMON-DRAIN LOGIC-LEVEL POWER DMOS ARRAY

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TPIC3322L

3CHANNEL COMMONDRAIN LOGICLEVEL POWER DMOS ARRAY

SLIS035B − JUNE 1994 − REVISED SEPTEMBER 1995

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS

77251−1443

7

TYPICAL CHARACTERISTICS

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

VSD − Source-to-Drain Voltage − V

160

80

40

0

360

120

0

4

8

12162024

CAPACITANCE

vs

DRAIN-TO-SOURCE VOLTAGE

400

28

32

36

40

VDS − Drain-to-Source Voltage − V

VGS = 0

f = 1 MHz

TJ = 25°C

Ciss(0) = 158 pF

Coss(0) = 400 pF

Crss(0) = 78 pF

Ciss

Coss

Crss

10

0.1

1

0.1

0.01

10

TJ = 150°C

TJ = 125°C

TJ = 75°C

TJ = − 40°C

TJ = 25°C

VGS = 0

Figure 11

Figure 12

75

50

25

0

100

200

100

300

400

500

600

VGS = 0

VDS = 48 V

IS = 0.375 A

TJ = 25°C

See Figure 1

Reverse dl/dt − A/

µs

REVERSE-RECOVERY TIME

vs

REVERSE di/dt

DRAIN-TO-SOURCE AND GATE-TO-SOURCE VOLTAGE

vs

GATE CHARGE

Qg − Gate Charge − nC

0

0.5

1

1.5

2

30

20

10

0

40

50

60

70

6

4

2

0

8

10

12

14

ID = 0.375 A

TJ = 25°C

See Figure 3

VDS = 48 V

VDS = 30 V

VDS = 20 V

Z1, Z2, and Z3

D1

Figure 13

Figure 14

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