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TPS54314QPWPRQ1 Datasheet(PDF) 5 Page - Texas Instruments

Part # TPS54314QPWPRQ1
Description  3-V TO 6-V INPUT, 3-A OUTPUT SYNCHRONOUS-BUCK PWM SWITCHER WITH INTEGRATED FETs (SWIFT田?
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS54314QPWPRQ1 Datasheet(HTML) 5 Page - Texas Instruments

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TPS54311-Q1, TPS54312-Q1
TPS54313-Q1, TPS54314-Q1
TPS54315-Q1, TPS54316-Q1
SGLS242G − OCTOBER 2004 − REVISED SEPTEMBER 2008
www.ti.com
5
ELECTRICAL CHARACTERISTICS (continued)
TJ = −40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain(1)
26
dB
Error amplifier unity gain bandwidth(1)
3
5
MHz
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin
(excluding dead time)
10-mV overdrive(1)
70
85
ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.82
1.2
1.4
V
Enable hysteresis voltage, SS/ENA(1)
0.03
V
Falling edge deglitch, SS/ENA(1)
2.5
µs
TPS54311
2.6
3.3
4.1
TPS54312
3.5
4.5
5.4
Internal slow start time(1)
TPS54313
4.4
5.6
6.7
ms
Internal slow-start time(1)
TPS54314
2.6
3.3
4.1
ms
TPS54315
3.6
4.7
5.6
TPS54316
4.7
6.1
7.6
Charge current, SS/ENA
SS/ENA = 0 V
2.5
5
8
µA
Discharge current, SS/ENA
SS/ENA = 0.2 V,
VI = 2.7 V
1.2
2.3
4
mA
POWER GOOD
Power good threshold voltage
VSENSE falling
90
%Vref
Power good hysteresis voltage(1)
3
%Vref
Power good falling edge deglitch(1)
35
µs
Output saturation voltage, PWRGD
I(sink) = 2.5 mA
0.18
0.3
V
Leakage current, PWRGD
VI = 5.5 V
1
µA
CURRENT LIMIT
Current limit trip point
VI = 3 V, output shorted
4
6.5
A
Current limit trip point
VI = 6 V, output shorted
4.5
7.5
A
Current limit leading edge blanking time
See (1)
100
ns
Current limit total response time
See (1)
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
135
150
165
°C
Thermal shutdown hysteresis(1)
10
°C
OUTPUT POWER MOSFETS
r
Power MOSFET switches
VI = 6 V(2)
59
88
m
Ω
rDS(on)
Power MOSFET switches
VI = 3 V(2)
85
136
m
Ω
(1) Specified by design
(2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design.


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