Electronic Components Datasheet Search |
|
TM2SN64EPH Datasheet(PDF) 9 Page - Texas Instruments |
|
TM2SN64EPH Datasheet(HTML) 9 Page - Texas Instruments |
9 / 15 page TM2SN64EPH 2097152 BY 64BIT TM4SN64EPH 4194304 BY 64BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS706A − MARCH 1998 − REVISED APRIL 1998 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 serial presence detect The serial presence detect (SPD) is contained in a 256-byte serial EEPROM located on the module. The SPD nonvolatile EEPROM contains various data such as module configuration, SDRAM organization, and timing parameters (see Table 1 and Table 2). Only the first 128 bytes are programmed by Texas Instruments; the remaining 128 bytes are available for customer use. Programming is done through an IIC bus using the clock (SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard. See the Texas Instruments Serial Presence Detect Technical Reference (literature number SMMU001) for further details. SPD contents for the TMxSN64EPH devices are listed in the following tables:. Table 1 – TM2SN64EPH Table 2 – TM4SN64EPH Table 1. Serial Presence Detect Data for the TM2SN64EPH BYTE DESCRIPTION OF FUNCTION TM2SN64EPH-10 BYTE NO. DESCRIPTION OF FUNCTION ITEM DATA 0 Defines number of bytes written into serial memory during module manufacturing 128 bytes 80h 1 Total number of bytes of SPD memory device 256 bytes 08h 2 Fundamental memory type (FPM, EDO, SDRAM, . . .) SDRAM 04h 3 Number of row addresses on this assembly 11 0Bh 4 Number of column addresses on this assembly 9 09h 5 Number of module rows on this assembly 1 bank 01h 6 Data width of this assembly 64 bits 40h 7 Data width continuation 00h 8 Voltage interface standard of this assembly LVTTL 01h 9 SDRAM cycle time at maximum supported CAS latency (CL), CL = X tCK = 10 ns A0h 10 SDRAM access from clock at CL = X tAC = 7.5 ns 75h 11 DIMM configuration type (non-parity, parity, error correcting code [ECC]) Non-Parity 00h 12 Refresh rate / type 15.6 µs/ self-refresh 80h 13 SDRAM width, primary DRAM x8 08h 14 Error-checking SDRAM data width N/A 00h 15 Minimum clock delay, back-to-back random column addresses 1 CK cycle 01h 16 Burst lengths supported 1, 2, 4, 8 0Fh 17 Number of banks on each SDRAM device 2 banks 02h 18 CAS latencies supported 2, 3 06h 19 CS latency 0 01h 20 Write latency 0 01h 21 SDRAM module attributes Non-buffered/ Non-registered 00h 22 SDRAM device attributes: general VDD tolerance = (+10%), Burst read / write, precharge all, auto precharge 0Eh 23 Minimum clock cycle time at CL = X − 1 tCK = 15 ns F0h 24 Maximum data-access time from clock at CL = X − 1 tAC = 7.5 ns 75h 25 Minimum clock cycle time at CL = X − 2 N/A 00h |
Similar Part No. - TM2SN64EPH |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |